Table 1 Different memory technology comparisons at 32Â nm
From: A novel power model for future heterogeneous 3D chip-multiprocessors in the dark silicon age
Technology | Area (mm2) | Read latency (ns) | Write latency (ns) | Leakage power at 80°C (mW) | Read energy (nJ) | Write energy (nJ) |
|---|---|---|---|---|---|---|
1Â MB SRAM | 3.03 | 0.702 | 0.702 | 444.6 | 0.168 | 0.168 |
4Â MB eDRAM | 3.31 | 1.26 | 1.26 | 386.8 | 0.142 | 0.142 |
4Â MB STT-RAM | 3.39 | 0.880 | 10.67 | 190.5 | 0.278 | 0.765 |
16Â MB PRAM | 3.47 | 1.760 | 43.7 | 210.3 | 0.446 | 0.705 |