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Table 1 Different memory technology comparisons at 32 nm

From: A novel power model for future heterogeneous 3D chip-multiprocessors in the dark silicon age

Technology Area (mm2) Read latency (ns) Write latency (ns) Leakage power at 80°C (mW) Read energy (nJ) Write energy (nJ)
1 MB SRAM 3.03 0.702 0.702 444.6 0.168 0.168
4 MB eDRAM 3.31 1.26 1.26 386.8 0.142 0.142
4 MB STT-RAM 3.39 0.880 10.67 190.5 0.278 0.765
16 MB PRAM 3.47 1.760 43.7 210.3 0.446 0.705